Production Capabilities
The Phoenix system is engineered for high throughput and maximum uptime in any fabrication environment, from pilot production to industrial-grade manufacturing. Technologists and researchers rely on the Phoenix for repeatable, highly accurate film deposition on flat and 3D substrates alike. And with support for up to six individual precursor lines, the Phoenix delivers solid, liquid, or gaseous process chemistries depending on your thin film needs. A compact footprint and innovative design, plus numerous automation options, makes the Phoenix the practical choice for those with batch production ALD requirements.
Key features include:
- Precise software control of process parameters, including temperature, flow and pressure, for defect-free coatings on even the most sensitive substrates
- Patented ALD Shield™ vapor trap to prevent build-up of deposits and minimizes excess process gases from being exhausted into the environment
- Large process chamber accepts GEN 2.5 substrates, multiple wafer cassettes and larger 3D objects
- Low cost of ownership with minimal startup and operational costs
- Compact footprint that conserves valuable clean room space
- Standard recipes and ALD materials readily available
- Comprehensive support and services worldwide from technical team and PhD scientists
- CE, FCC, and CSA compliant with many built-in safety features
Technical specifications
Substrate Size | Up to 370 mm x 470 mm (Gen 2.5 Panels) 100 wafers – 100 mm (cassette) 100 wafers – 150 mm (cassette) 100 wafers – 200 mm (cassette) 25 wafers – 300 mm (cassette) Custom holders for 3D objects |
Dimensions (W x L x H) | 900 mm x 1370 mm x 1700 mm |
Cabinet | Vented cabinet with smoke detection |
Power | 208 VAC 3 Phase, 8500 W (excluding pump) |
Control | Windows™ PC |
Substrate Temperature | Up to 285º C |
Deposition Uniformity (AI203) | ≤2% |
Vacuum Pump | Dry pump ≥350 CFM |
Compatibility | Cleanroom compatible |
Precursor Delivery System | Standard 4 lines accommodate solid, liquid and gas precursors Lines independently heated up to 200°C |
Valves | High speed ALD valves |
Precursor Cylinders | 3.1 l or 600ml cylinders |
Carrier/Venting Gas | N2 or Ar MFC flow control |
Chamber Volume (L x W x H) | (50cm, 40cm,24cm) |