Phoenix ALD Production Tool

Production CapabilitiesPhoenix

Phoenix Phoenix ALD System

The Phoenix system is engineered for high throughput and maximum uptime in any fabrication environment, from pilot production to industrial-grade manufacturing. Technologists and researchers rely on the Phoenix for repeatable, highly accurate film deposition on flat and 3D substrates alike. And with support for up to six individual precursor lines, the Phoenix delivers solid, liquid, or gaseous process chemistries depending on your thin film needs. A compact footprint and innovative design, plus numerous automation options, makes the Phoenix the practical choice for those with batch production ALD requirements.

Key features include:

  • Precise software control of process parameters, including temperature, flow and pressure, for defect-free coatings on even the most sensitive substrates
  • Patented ALD Shield™ vapor trap to prevent build-up of deposits and minimizes excess process gases from being exhausted into the environment
  • Large process chamber accepts GEN 2.5 substrates, multiple wafer cassettes and larger 3D objects
  • Low cost of ownership with minimal startup and operational costs
  • Compact footprint that conserves valuable clean room space
  • Standard recipes and ALD materials readily available
  • Comprehensive support and services worldwide from technical team and PhD scientists
  • CE, FCC, and CSA compliant with many built-in safety features

Technical specifications

Substrate Size Up to 370 mm x 470 mm (Gen 2.5 Panels)
100 wafers – 100 mm (cassette)
100 wafers – 150 mm (cassette)
100 wafers – 200 mm (cassette)
25 wafers – 300 mm (cassette)
Custom holders for 3D objects
Dimensions (W x L x H) 900 mm x 1370 mm x 1700 mm
Cabinet Vented cabinet with smoke detection
Power 208 VAC 3 Phase, 8500 W (excluding pump)
Control Windows™ PC
Substrate Temperature Up to 285º C
Deposition Uniformity (AI203) ≤2%
Vacuum Pump Dry pump ≥350 CFM
Compatibility Cleanroom compatible
Precursor Delivery System Standard 4 lines accommodate solid, liquid and gas precursors
Lines independently heated up to 200°C
Valves High speed ALD valves
Precursor Cylinders 3.1 l or 600ml cylinders
Carrier/Venting Gas N2 or Ar MFC flow control
Chamber Volume (L x W x H) (50cm, 40cm,24cm)